Silicon controlled rectifier structures with reduced turn on...

Details Silicon controlled rectifier structures with reduced turn on... Silicon controlled rectifier structures with reduced turn on...

2006-10-24

2006-10-24

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With switching speed enhancement means

C257S162000

Reexamination Certificate

active

07126168

ABSTRACT:
The turn on time of an electrostatic discharge (ESD) structure, such as a silicon controlled rectifier (SCR), a low-voltage triggering SCR (LVTSCR), and a bipolar SCR (BSCR), is reduced by turning on the structure in two steps: a first step that locally turns on the pnp and npn transistors, and a second step that, over time, fully turns on the structure.

REFERENCES:
patent: 6433368 (2002-08-01), Vashchenko et al.
patent: 6541801 (2003-04-01), Vashchenko et al.
patent: 6998651 (2006-02-01), Vashohenko et al.
Christian C. Russ et al., “GGSCRs: GGNMOS Triggered Silicon Controlled Rectifiers for ESD Protection in Deep Sub-Micron CMOS Processes”, Published at the 2001 EOS/ESD Symposium, Sep. 8-14, 2001, pp. 1A.3.1-1A.3.10.

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