Silicon-controlled rectifier (SCR) device for high-voltage...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

Reexamination Certificate

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C257S355000, C257S511000

Reexamination Certificate

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07842971

ABSTRACT:
A silicon-controlled rectifier (SCR) device having a high holding voltage includes a PNP transistor and an NPN transistor, each transistor having both p-type and n-type dopant regions in their respective emitter areas. The device is particularly suited to high voltage applications, as the high holding voltage provides a device which is more resistant to latchup subsequent to an electrostatic discharge event compared to devices having a low holding voltage.

REFERENCES:
patent: 5808342 (1998-09-01), Chen et al.
patent: 5959821 (1999-09-01), Voogel
patent: 6476422 (2002-11-01), Yu
patent: 6521952 (2003-02-01), Ker et al.
patent: 6573566 (2003-06-01), Ker et al.
patent: 6576959 (2003-06-01), Kunz et al.
patent: 6594132 (2003-07-01), Avery
patent: 6720624 (2004-04-01), Vashchenko et al.
patent: 6765771 (2004-07-01), Ker et al.
patent: 6803633 (2004-10-01), Mergens et al.
patent: 6946690 (2005-09-01), Vashchenko et al.
patent: 6960792 (2005-11-01), Nguyen
patent: 7060538 (2006-06-01), Steinhoff
patent: 7071528 (2006-07-01), Ker et al.
patent: 7217980 (2007-05-01), Chen et al.
patent: 2006014875 (2006-02-01), None
Vashchenko et al., “High Holding Voltage Cascoded LVTSCR Structures for 5.5-V Tolerant ESD Protection Clamps”, IEEE Transactions on Device and Materials Reliability, vol. 4, pp. 273-280, Jun. 2004.
Vashchenko et al, “Comparison of ESD Protection Capability of Lateral BJT, SCR and Bi-directional SCR for High-Voltage BiCMOS Circuits”, in Proc. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2002, pp. 181-184.
Hsu et al., “Dependence of Device Structures on Latchup Immunity in a High Voltage 40-V CMOS Process with Drain-Extended MOSFETs”, IEEE Transactions on Electron Devices, vol. 54, Apr. 2007.
Ker et al., “Overview of On-chip Electrostatic Discharge Protection Design with SCR-based Devices in CMOS Integrated Circuits”, IEEE Transactions on Device and Material Reliability, vol. 5, No. 2, Jun. 2005.
Quittard et al., “ESD Protection for High-voltage CMOS Technologies”, in Proc. EOS/ESD Symposium, pp. 77-86, 2006.
Vashchenko et al., “Emitter Injection Control in LVTSCR for Latch-up Free ESD Protection”, International Microelectronics Conference, Nis, Yugoslavia, May 12-15, 2002.
Lin et al., “Design on Latchup-Free Power-Rail ESD Clamp Circuit in High-voltage CMOS ICs”, in Proc. of the EOS/ESD Symposium, 2004.

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