Silicon controlled rectifier for the electrostatic discharge...

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

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Reexamination Certificate

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07542253

ABSTRACT:
The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.

REFERENCES:
patent: 4947227 (1990-08-01), Teng
patent: 5702973 (1997-12-01), Mitani et al.
patent: 5959820 (1999-09-01), Ker et al.
patent: 6011681 (2000-01-01), Ker et al.
patent: 6014053 (2000-01-01), Womack
patent: 6081002 (2000-06-01), Amerasekera et al.
patent: 6242763 (2001-06-01), Chen et al.
patent: 6410963 (2002-06-01), Lai et al.
patent: 6465283 (2002-10-01), Chang et al.
patent: 6498357 (2002-12-01), Ker et al.
patent: 6521952 (2003-02-01), Ker et al.
patent: 6618233 (2003-09-01), Russ et al.
patent: 2002/0089017 (2002-07-01), Lai et al.
Albert Z. Wang; “A New Design For Complete On-Chip ESD Protection”; Dept. of Electrical & Computer Engineering; IEEE 2000; pp. 87-90.

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