Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2005-03-29
2005-03-29
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S355000, C257S506000
Reexamination Certificate
active
06872987
ABSTRACT:
A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates polysilicon gates bridging SCR diode junction elements and also bridging between SCR elements and neighboring STI structures. The presence of the strategically located polysilicon gates effectively counters the detrimental effects of non-planar STI “pull down” regions as well as compensating for the interaction of silicide structures and the effective junction depth of diode elements bounded by STI elements. Connecting the gates to appropriate voltage sources such as the SCR anode input voltage and the SCR cathode voltage, typically ground, reduces normal operation leakage of the ESD protection device.
REFERENCES:
patent: 4939616 (1990-07-01), Rountree
patent: 5012317 (1991-04-01), Rountre
patent: 5465189 (1995-11-01), Polgreen et al.
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5923067 (1999-07-01), Voldman
patent: 5945713 (1999-08-01), Voldman
patent: 6074899 (2000-06-01), Voldman
patent: 6081002 (2000-06-01), Amerasekera et al.
patent: 6605493 (2003-08-01), Yu
patent: 20030213971 (2003-11-01), Yu
S. Voldman et al., “Semiconductor Process and Structural Optimization of Shallow Trench Isolation-Defined and Polysilicon-Bound Source/Drain Diodes for ESD Networks,” EDS/ESD Symposium 98-151, pp. 151-160.
Duane Morris LLP
Prenty Mark V.
Taiwan Semiconductor Manufacturing Co.
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