Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2005-09-23
2010-02-09
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S355000, C257SE29181
Reexamination Certificate
active
07659558
ABSTRACT:
Devices for protecting drain extended metal oxide semiconductor (DEMOS) output transistors from damage caused by electrostatic discharge (ESD) events are provided. In general, the devices include a silicon controlled rectifier (SCR) and a DEMOS transistor configured to breakdown at a lower voltage than a breakdown voltage of the output driver transistor it is configured to protect. The devices further include a pair of ohmic regions configured to trigger the SCR upon breakdown of the drain contact region of the DEMOS transistor and a collection region configured to collect charge generated by the SCR. The transistor, the pair of ohmic regions, and the SCR are respectively configured and arranged to independently set the breakdown voltage of the drain contact region, the trigger voltage of the SCR, and the holding voltage of the SCR. One of the ohmic regions may be coupled to the drain contact region of the transistor.
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Puchner Helmut
Walker Andrew J.
Cypress Semiconductor Corporation
Lee Eugene
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