Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2007-09-25
2007-09-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S173000, C257S355000, C257S358000, C257S359000, C257S360000, C257SE29215, C257SE29216, C257SE29217, C257SE29218, C438S135000
Reexamination Certificate
active
11032462
ABSTRACT:
An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR) having at least one first type high dopant region coupled to a first reference potential of the protected circuitry, and at least one second type high dopant region coupled to a second reference potential of the IC. The SCR is triggered by an external on-chip trigger device, which is adapted for injecting a trigger current into at least one gate of the SCR.
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Armer John
Mergens Markus Paul Josef
Russ Cornelius Christian
Verhaege Koen Gerard Maria
Budd Paul
Jackson Jerome
Lowenstein & Sandler PC
Sarnoff Corporation
Sarnoff Europe BVBA
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