Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Patent
1994-10-25
1996-03-26
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
257110, 257119, 257122, 257124, 257146, 257173, 257360, H01L 2974
Patent
active
055023177
ABSTRACT:
A semiconductor controlled rectifier is disclosed herein. In a preferred embodiment, a first n-doped region 112 is formed in a p-doped semiconductor layer 126. A first n-well region 122 is formed within the first doped region 112. This well 122 extends through the region 112 and into the layer 126. A second n-doped region 114 is also formed in the layer 126. The second region 1114 is spaced from the first region 112. A second n-well 142 is formed in the layer 126 such that it partially overlaps the second region 114. A n-doped region 144 and a p-doped region 146 are each formed in the second n-well 142 and abut one another.
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Donaldson Richard L.
Kesterson James C.
Matsil Ira S.
Texas Instruments Incorporated
Wojciechowicz Edward
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