Silicon controlled rectifier

Details Silicon controlled rectifier Silicon controlled rectifier

2007-01-09

2007-01-09

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S162000, C257S168000, C257S170000

Reexamination Certificate

active

10711542

ABSTRACT:
A silicon controlled rectifier is provided, including: a first conducting-type substrate; two second conducting-type deep wells separately disposed inside the first conducting-type substrate; a gate above the first conducting-type substrate and between the two second conducting-type deep wells; a first source/drain inside one of the two second conducting-type deep wells and at one side of the gate; a second source/drain inside the other of the two second conducting-type deep wells and at the other side of the gate; a first conducting-type doped region inside the first conducting-type substrate; and a first conducting-type doped floating region inside the one of the two second conducting-type deep wells and adjacent to the first source/drain. The first conducting-type doped floating region and the first source/drain constitute an equivalent Zener diode so that the modified silicon controlled rectifier can have a higher holding voltage.

REFERENCES:
patent: 5856214 (1999-01-01), Yu
patent: 6091593 (2000-07-01), Lin
patent: 6281527 (2001-08-01), Chen
patent: 6521952 (2003-02-01), Ker et al.
patent: 6538288 (2003-03-01), Lee et al.
patent: 6646840 (2003-11-01), Sugerman et al.
patent: 7034363 (2006-04-01), Chen
patent: 2003/0052329 (2003-03-01), Kobayashi et al.

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