Silicon containing negative resist for DUV, I-line or E-beam lit

Details Silicon containing negative resist for DUV, I-line or E-beam lit Silicon containing negative resist for DUV, I-line or E-beam lit

1992-08-20

1995-01-31

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430167, 430197, 528 43, G03F 7012

Patent

active

053858042

ABSTRACT:
A silicon-containing negative photoresist is used as the top imaging layer in a bilayer substrate patterning scheme. The photoresist is a single component resist in which the photoactive element is chemically bonded to the base polymer. In particular, an aromatic azide containing group is covalently bonded to the phenolic group of the poly(4-hydroxybenzyl)silsesquioxane (PHBS) via an esterification reaction. The new photoresist is easily synthesized and has the advantageous properties of aqueous base developability, excellent O.sub.2 RIE resistance, and high sensitivity to DUV, I-line and E-beam exposures.

REFERENCES:
patent: 4702990 (1987-10-01), Tanaka et al.
patent: 4745169 (1988-05-01), Sugiyama
patent: 4822716 (1989-04-01), Onishi et al.

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