Silicon compatible integrated light communicator

Details Silicon compatible integrated light communicator Silicon compatible integrated light communicator

2011-01-25

2011-01-25

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Using epitaxial lateral overgrowth

C438S479000, C438S481000, C438S492000, C257SE21086

Reexamination Certificate

active

07875522

ABSTRACT:
Various methods and devices are implemented using efficient silicon compatible integrated light communicators. According to one embodiment of the present invention, a semiconductor device is implemented for communicating light, such as by detecting, modulating or emitting light. The device has a silicon-seeding location, an insulator layer and a second layer on the insulator layer. The second layer includes a silicon-on-insulator region and an active region surrounded by the silicon-on-insulator region and connected to the silicon-seeding location. The active region includes a single-crystalline germanium-based material that extends from the silicon-seeding location through a passageway with a cross-sectional area that is sufficiently small to mitigate crystalline growth defects. The single-crystalline germanium-based material is physically coupled to the insulating layer such that the insulating layer introduces a high tensile strain to the germanium-based material, and a more specific aspect is directed to an SOI implementation.

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