Silicon cleaning method for semiconductor materials and...

Details Silicon cleaning method for semiconductor materials and... Silicon cleaning method for semiconductor materials and...

2007-05-29

2007-05-29

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S011000

Reexamination Certificate

active

10928682

ABSTRACT:
A cleaning method cleans silicon for semiconductor materials using pure water treated by a reverse osmosis treatment and by ion exchange treatment and reduces the aluminum and iron remaining on the silicon surface.

REFERENCES:
patent: 6557569 (2003-05-01), Katagiri et al.
patent: 6783748 (2004-08-01), Tanaka et al.
patent: 2003-245667 (2003-09-01), None
“Silicon Chemistry”, Realize Corp., pp. 903-908.
Silicon Technologies Committee, “Standard of JEITA EM-3601”, 1974.

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