Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-03-28
2006-03-28
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S672000, C438S681000, C438S628000, C438S629000, C438S630000, C118S722000, C257S762000, C257S773000
Reexamination Certificate
active
07019402
ABSTRACT:
This disclosure teaches a method of filling deep vias or capping deep conducting paste filled vias in silicon or glass substrate using laser assisted chemical vapor deposition of metals. This method uses a continuous wave or pulsed laser to heat the via bottom and the growing metal fill selectively by selecting the laser wavelength such that silicon and/or glass do not absorb the energy of the laser in any appreciable manner to cause deposition in the field. Alternatively holographic mask or an array of micro lenses may be used to focus the laser beams to the vias to fill them with metal. The substrate is moved in a controlled manner in the z-direction away from the laser at about the rate of deposition thus causing the laser heating to be focused on the surface region of the growing metal fill.
REFERENCES:
patent: 5060595 (1991-10-01), Ziv et al.
patent: 6429524 (2002-08-01), Cooney et al.
patent: 6686278 (2004-02-01), Wang et al.
Andry Paul Stephen
Buchwalter Leena Paivikki
Budd Russell Alan
Wassick Thomas Anthony
Connolly Bove Lodge & Hutz LPP
International Business Machines - Corporation
Morris Daniel P.
Tran Mai-Huong
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