Silicon casting apparatus and method of producing silicon ingot

Details Silicon casting apparatus and method of producing silicon ingot Silicon casting apparatus and method of producing silicon ingot

2011-01-11

2011-01-11

Heitbrink, Tim (Department: 1791)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S033000, C117S214000, C117S216000, C117S924000

Reexamination Certificate

active

07867334

ABSTRACT:
A silicon casting apparatus for producing polycrystal silicon ingot by heating a silicon melt (8) held in a mold (4) from above by a heater (3) and cooling it from below while changing the heat exchange area of a heat exchange region (HE), defined between a pedestal (5) having the mold (4) placed thereon and a bottom cooling member (6), in such a manner as to keep pace with the rise of the solid-liquid interface of the silicon melt (8), thereby causing unidirectional solidification upward along the mold (4); and a method of producing polycrystal silicon ingot using such apparatus. According to this production method, the temperature gradient given to the silicon melt (8) can be maintained at constant by adjusting the heat exchange area, so that polycrystal silicon ingot having good characteristics can be produced with good reproducibility.

REFERENCES:
patent: 3561931 (1971-02-01), Vogel et al.
patent: 4911780 (1990-03-01), Morioka et al.
patent: 6027563 (2000-02-01), Choudhury et al.
patent: 6136091 (2000-10-01), Yamazaki et al.
patent: 6383285 (2002-05-01), Wakita et al.
patent: 2002/0139297 (2002-10-01), Wakita et al.
patent: 63-166711 (1988-07-01), None
patent: 04-068276 (1992-10-01), None
patent: 09-071497 (1997-03-01), None
patent: 11-011924 (1999-01-01), None
patent: 2001-010810 (2001-01-01), None
patent: 2002-292458 (2002-10-01), None
patent: 2002-293526 (2002-10-01), None

Affiliated with

Also associated with

Rating

Silicon casting apparatus and method of producing silicon ingot does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon casting apparatus and method of producing silicon ingot, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon casting apparatus and method of producing silicon ingot will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2740691