Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Reexamination Certificate
2004-08-02
2008-10-21
Johnson, Edward M (Department: 1793)
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
C423S346000
Reexamination Certificate
active
07438884
ABSTRACT:
A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
REFERENCES:
patent: 5354580 (1994-10-01), Goela et al.
patent: 5374412 (1994-12-01), Pickering et al.
patent: 5612132 (1997-03-01), Goela et al.
patent: 5618594 (1997-04-01), Tulloch et al.
patent: 6077619 (2000-06-01), Sullivan
patent: 2002/0004444 (2002-01-01), Goela et al.
patent: 0 307 292 (1989-03-01), None
patent: 0 588 479 (1994-03-01), None
patent: 0 955 278 (1999-11-01), None
patent: 0 987 231 (2000-03-01), None
patent: 1 018 567 (2000-07-01), None
Collins et al., “Grain Size Dependence of the Thermal Conductivity of Polycrystalline Chemical Vapor Deposited β-SiC at Low Temperatures”, J. Appl. Phys. 68 (12), Dec. 15, 1990, pp. 6510-6512.
Papasouliotis et al., “Hydrogen Chloride Effects on the CVD of Silicon Carbide from Methyltrichlorosilane”, Chem. Vap. Deposition 1998, 4, No. 6, pp. 235-246, no month.
Tateyama et al., “Prediction of Stacking Faults in β-Silicon Carbide: X-ray and NMR Studies”, Chem. Mater. 1997, 9, pp. 776-782, no month.
Geril et al., “Thin Shell Replicationof Grazing Incidence (Wolter Type I) SiC Mirrors”, Proceedings of the SPIE, SPIE, Bellingham, VA, US, vol. 2478, Apr. 18, 1995, pp. 215-227 XP002119139, p. 217.
Brese Nathaniel E.
Goela Jitendra S.
Pickering Michael A.
Johnson Edward M
Piskorski John J.
Rohm and Haas Electronic Materials LLC
LandOfFree
Silicon carbide with high thermal conductivity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon carbide with high thermal conductivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide with high thermal conductivity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4002425