Silicon carbide wafer bonded to a silicon wafer

Details Silicon carbide wafer bonded to a silicon wafer Silicon carbide wafer bonded to a silicon wafer

1994-06-21

1995-08-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

148DIG148, H01L 2118

Patent

active

054419115

ABSTRACT:
A silicon carbide structure (10) and method capable of using existing silicon wafer fabrication facilities. A silicon wafer (20) is provided which has a first diameter. At least one silicon carbide wafer (30) is provided which has a given width and length (or diameter). The width and length (or diameter) of the silicon carbide wafer (30) are smaller than the diameter of the silicon wafer (20). The silicon wafer (20) and the silicon carbide wafer (30) are then bonded together. The bonding layer (58) may comprise silicon germanium, silicon dioxide, silicate glass or other materials. Structures such as MOSFET (62) may be then formed in silicon carbide wafer (30).

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