Silicon carbide transistor and method

Details Silicon carbide transistor and method Silicon carbide transistor and method

1995-06-30

1999-12-14

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257 77, H01L 29812

Patent

active

060021489

ABSTRACT:
A silicon carbide MESFET (10) is formed to have a source (21) and a drain (22) that are self-aligned to a gate (16) of the MESFET (10). The gate (16) is formed to have a T-shaped structure with a gate-to-source spacer (18) and gate-to-drain spacer (19) along each side of a base of the gate (16). The gate (16) is used as a mask for implanting dopants to form the source (21) and drain (22). A laser annealing is performed after the implantation to activate the dopants. Because the laser annealing is a low temperature operation, the gate (16) is not detrimentally affected during the annealing.

REFERENCES:
patent: 4532532 (1985-07-01), Jackson
patent: 4729966 (1988-03-01), Koshino et al.
patent: 5270554 (1993-12-01), Palmour
patent: 5399883 (1995-03-01), Baliga
Yoder, et al. "Silicon Carbide Comes of Age," Naval Research Reviews, 1989, pp. 26-33.
S. Ahmed et al., "In Situ Processing of Silicon Carbide", Inst. Phys. Conf. Ser. No. 141:Chapter 4; Paper presented at Int. Symp. Compound Semicond., San Diego, Sep. 18-22, 1994; 1995 IOP Publishing Ltd.

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