Silicon carbide thin film circuit element and method of manufact

Details Silicon carbide thin film circuit element and method of manufact Silicon carbide thin film circuit element and method of manufact

1994-06-27

1996-05-14

Turner, Archene

Stock material or miscellaneous articles

Composite

Of metal

428446, 428457, 428472, 428697, 428698, 428699, 428701, 428702, H01L 2701

Patent

active

055165893

ABSTRACT:
A silicon carbide thin film circuit element, in which a layer of .beta.-SiC is allowed to grow laterally also on the surface of a P-type Si monocrystal substrate by vapor growth deposition, to form a circuit element is formed on an insulating material layer having a high melting point.

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patent: 5162255 (1992-11-01), Ito et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5184199 (1993-02-01), Fujii et al.

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