Silicon carbide substrates and a method of producing the same

Details Silicon carbide substrates and a method of producing the same Silicon carbide substrates and a method of producing the same

1986-04-29

1987-05-12

Childs, Sadie L.

Coating processes

Electrical product produced

Metallic compound coating

4271264, 427314, 4273762, 4273763, 427399, 4274192, 4274196, B05D 512

Patent

active

046649468

ABSTRACT:
This invention relates to a method of producing a silicon carbide substrate having desirable electrical insulation properties. The silicon carbide substrate is produced by applying to a surface of a silicon carbide plate a film-forming composition which consists essentially of at least one oxide or substance with produces an oxide by decomposition of an element selected from the group consisting of aluminum, phosphorus, boron, germanium, arsenic, antimony, bismuth, vanadium, zinc, lead, cadmium, sodium, potassium, lithium, beryllium, calcium, magnesium, barium and strontium and heating the silicon carbide body in an oxidizing atmosphere to form a eutectic oxide layer thereon.

REFERENCES:
patent: 1653123 (1927-12-01), Rentschler
patent: 1653918 (1927-12-01), Martin
patent: 1818904 (1931-08-01), Martin
patent: 1975069 (1934-10-01), Benner et al.
patent: 2874067 (1959-02-01), Sommer et al.
patent: 2943008 (1960-06-01), Saunders
patent: 4159357 (1979-06-01), Grunke
patent: 4199339 (1980-04-01), Grunke

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