Silicon carbide substrates and a method of producing the same

Details Silicon carbide substrates and a method of producing the same Silicon carbide substrates and a method of producing the same

1982-12-21

1985-02-12

Lesmes, George F.

Stock material or miscellaneous articles

Composite

Of quartz or glass

428432, 428446, 428698, 428702, C03C 312

Patent

active

044991479

ABSTRACT:
A silicon carbide substrate having excellent electrical insulation properties is disclosed. The silicon carbide substrate is produced by closely adhering to a surface of a silicon carbide plate body a eutectic oxide layer comprising SiO.sub.2 produced by partial oxidation of the plate body and at least one oxide selected from Al.sub.2 O.sub.3, P.sub.2 O.sub.5, B.sub.2 O.sub.3, GeO.sub.2, As.sub.2 O.sub.3, Sb.sub.2 O.sub.3, Bi.sub.2 O.sub.3, V.sub.2 O.sub.5, ZnO, PbO, Pb.sub.3 O.sub.4, PbO.sub.2, CdO, Na.sub.2 O, K.sub.2 O, BeO, CaO, MgO, BaO and SrO.

REFERENCES:
patent: 1653123 (1927-12-01), Rentschler
patent: 1653918 (1927-12-01), Martin
patent: 1818904 (1931-08-01), Martin
patent: 1975069 (1934-10-01), Benner et al.
patent: 2874067 (1959-02-01), Sommer et al.
patent: 2943008 (1960-06-01), Saunders

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