Silicon carbide static induction transistor

Details Silicon carbide static induction transistor Silicon carbide static induction transistor

1995-06-05

1997-03-18

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257264, 257266, 257267, 257268, 257473, 257471, H01L 310312, H01L 2980, H01L 31112, H01L 27095

Patent

active

056125470

ABSTRACT:
A static induction transistor fabricated of silicon carbide, preferably 6H polytype, although any silicon carbide polytype may be used. The preferred static induction transistor is the recessed Schottky barrier gate type. Thus, a silicon carbide substrate is provided. Then, a silicon carbide drift layer is provided upon the substrate, wherein the drift layer has two spaced-apart protrusions or fingers which extend away from the substrate. Each protrusion of the drift layer has a source region of silicon carbide provided thereon. A gate material is then provided along the drift layer between the two protrusions. A conductive gate contact is provided upon the gate material and a conductive source contact is provided upon each source region. A conductive drain contact is provided along the substrate. Other gate types for the static induction transistor are contemplated. For example, a planar Schottky barrier gate may be employed. Furthermore, recessed or planar MOS gates may be utilized, as may a PN junction gate.

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