Patent
1990-10-17
1992-06-23
Jackson, Jr., Jerome
357 232, 357 61, H01L 2348, H01L 2946, H01L 2920, H01L 2922
Patent
active
051247798
ABSTRACT:
A silicon carbide semiconductor device is disclosed which includes a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode is made of a titanium-aluminum alloy. Also disclosed is a method of producing the silicon carbide semiconductor device.
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Fujii Yoshihisa
Furukawa Katsuki
Suzuki Akira
Asher Robert M.
Conlin David G.
Jackson, Jr. Jerome
Monin Donald L.
Sharp Kabushiki Kaisha
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