Silicon carbide semiconductor device having junction field...

Details Silicon carbide semiconductor device having junction field... Silicon carbide semiconductor device having junction field...

2007-06-12

2007-06-12

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S266000

Reexamination Certificate

active

10984957

ABSTRACT:
A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.

REFERENCES:
patent: 6573534 (2003-06-01), Kumar et al.
patent: 2003/0042491 (2003-03-01), Kumar et al.
patent: 2005/0139859 (2005-06-01), Kumar et al.
patent: A-2000-312008 (2000-11-01), None
F. Udrea et al., “A double channel normally-off SiC JFET device with ultra-low on-state resistance”,Proceedings of 2004 International Symposium on Power Semiconductor Devices&ICs, 2004, pp. 309-312.
J.H. Zhao et al., “Demonstration of first 1050 V, 21.7 mΩcm2normally-off 4H-SiC junction field-effect transistor with implanted vertical channel”,Electronic Letters, vol. 39 No. 1, Jan. 9, 2003, pp. 151-152.

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