Silicon carbide semiconductor device having junction field...

Details Silicon carbide semiconductor device having junction field... Silicon carbide semiconductor device having junction field...

2006-02-28

2006-02-28

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S076000, C257S133000, C257S134000, C438S133000, C438S136000, C438S931000

Reexamination Certificate

active

07005678

ABSTRACT:
A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

REFERENCES:
patent: 5233215 (1993-08-01), Baliga
patent: 2003/0096464 (2003-05-01), Lanois

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