Silicon carbide semiconductor device having junction barrier...

Details Silicon carbide semiconductor device having junction barrier... Silicon carbide semiconductor device having junction barrier...

2008-07-01

2010-12-14

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

To compound semiconductor

C257SE29338

Reexamination Certificate

active

07851882

ABSTRACT:
A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.

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