Silicon carbide semiconductor device having junction barrier...

Details Silicon carbide semiconductor device having junction barrier... Silicon carbide semiconductor device having junction barrier...

2011-02-22

2011-02-22

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S077000, C257S260000, C257S284000, C257S472000, C257S484000, C257S492000, C257SE21163, C257SE21359

Reexamination Certificate

active

07893467

ABSTRACT:
A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers.

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Office Action dated Jun. 2, 2009 from the Japan Patent Office in the corresponding JP Application No. 2007-143328 (and English Translation).

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