Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1997-01-22
1998-04-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257328, 257330, 438931, H01L 310312
Patent
active
057448264
ABSTRACT:
A semiconductor substrate 4 consisting of an n.sup.+ -type substrate 1, an n.sup.- -type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approximately in the (0001) carbon face. An n.sup.+ -type source region 5 is formed in the surface layer of the semiconductor layer 3, and a trench 7 runs from the main surface through the region 5 and the semiconductor layer 3 reaching to the semiconductor layer 2, and extending approximately layer 8 is provided on the region 5, the semiconductor layer 3 and the semiconductor layer 2 on the side walls of the trench 7, while a gate electrode layer 10 is formed on the inner side of a gate insulating film 9, a source electrode layer 12 is formed on the surface of the semiconductor region 5, and a drain electrode layer 13 is formed on the surface of the n.sup.+ -type substrate 1.
REFERENCES:
patent: 4859621 (1989-08-01), Einthoven
patent: 5170231 (1992-12-01), Fuji et al.
patent: 5233215 (1993-08-01), Baliga
patent: 5323040 (1994-06-01), Baliga
patent: 5389799 (1995-02-01), Uemoto
patent: 5399515 (1995-03-01), Davis et al.
patent: 5506421 (1996-04-01), Palmour
Proceeding of the 28th Intersociety Energy Conversion engineering Conference, vol. 1, Aug. 8, 1993, p. 1.249 -1.254.
Inst. Phys. Conf. Ser. No. 137, Chapter 1, Paper presented at the 5th Sic and Related Materials Conf. Washington DC 1993 pp. 55-58.
Proceeding of 3rd Conference of SIC and Related Wide Gap Semiconductor Study Group. Oct. 27-28, 1994, p. 27.
Jap J. Appln. Phys., vol. 21, No. 4, Apr. 4, 1982, pp. 579-585.
Jap. J. Appln/Phys, vol. 34, Part 1, No. 10, Oct. 1995, pp 5567-5573.
B. Jayant Baliga, "Critical Nature of Oxide/Interface Quality For SiC Power Devices", Microelectronic Engineering, vol. 28, No. 1/04, Jul. 1995 pp. 177-184.
Fuma Hiroo
Miyajima Takeshi
Murata Toshio
Takeuchi Yuichi
Tokura Norihito
Crane Sara W.
Denso Corporation
Wille Douglas A.
LandOfFree
Silicon carbide semiconductor device and process for its product does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon carbide semiconductor device and process for its product, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide semiconductor device and process for its product will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1534728