Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-09-13
2010-06-01
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257SE21054, C257SE29104, C438S268000
Reexamination Certificate
active
07728336
ABSTRACT:
In an SiC vertical MOSFET comprising a channel region and an n-type inverted electron guide path formed through ion implantation in a low-concentration p-type deposition film, the width of the channel region may be partly narrowed owing to implantation mask positioning failure, and the withstand voltage of the device may lower, and therefore, the device could hardly satisfy both low on-resistance and high withstand voltage. In the invention, second inverted layers (41, 42) are provided at the same distance on the right and left sides from the inverted layer (40) to be the electron guide path in the device, and the inverted layers are formed through simultaneous ion implantation using the same mask, and accordingly, the length of all the channel regions in the device is made uniform, thereby solving the problem.
REFERENCES:
patent: 6054352 (2000-04-01), Ueno
patent: 7365363 (2008-04-01), Kojima et al.
patent: 7528040 (2009-05-01), Das et al.
patent: 2005/0230686 (2005-10-01), Kojima et al.
patent: 2006/0057796 (2006-03-01), Harada et al.
patent: 2008/0090383 (2008-04-01), Nakamura et al.
patent: 2009/0134402 (2009-05-01), Yatsuo et al.
patent: 2009/0173949 (2009-07-01), Yatsuo et al.
patent: 10-233503 (1998-09-01), None
patent: 2005-252157 (2005-09-01), None
patent: 2005-310886 (2005-11-01), None
patent: 2006-147789 (2006-06-01), None
patent: 2004/036655 (2004-04-01), None
International Search Report mailed Dec. 4, 2007 for International Application No. PCT/JP2007/067838.
Fukuda Kenji
Harada Shinsuke
Kato Makoto
Okamoto Mitsuo
Yatsuo Tsutomu
Dang Trung
National Institute of Advanced Industrial Science and Technology
Wenderoth , Lind & Ponack, L.L.P.
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