Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-05-15
2007-05-15
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S328000, C257S335000, C257S339000
Reexamination Certificate
active
10801606
ABSTRACT:
An inventive semiconductor device is provided with: a silicon carbide substrate1;an n-type high resistance layer2;well regions3provided in a surface region of the high resistance layer2;a p+contact region4provided within each well region3;a source region5provided to laterally surround the p+contact region4within each well region3;first source electrodes8provided on the source regions5and made of nickel; second source electrodes9that cover the first source electrodes8and that are made of aluminum; a gate insulating film6provided on a portion of the high resistance layer2sandwiched between the two well regions3;a gate electrode10made of aluminum; and an interlayer dielectric film11that covers the second source electrodes9and the gate electrode10and that is made of silicon oxide.
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Toshiyuki Ohno, “Recent Progress in SiC-Based Device Processing”, Journal of Institute of Electronics, Information and Communication Engineers, pp. 128-133, vol. J81-C-II, No. 1, Jan. 1998, Japan.
Kitabatake Makoto
Kusumoto Osamu
Miyanaga Ryoko
Takahashi Kunimasa
Uchida Masao
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