Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-08-07
2011-11-08
Menz, Laura (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S368000, C257S616000, C257SE21051, C257SE21054, C257SE21065, C438S590000, C438S767000
Reexamination Certificate
active
08053784
ABSTRACT:
A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.
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Chen, Z, et al., “A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer,” Chinese Phys. Lett., vol. 20, No. 3, pp. 430-432, 2003.
Seki Akinori
Shibata Noriyoshi
Tani Yukari
Finnegan Henderson Farabow Garrett & Dunner LLP
Japan Fine Ceramics Center
Menz Laura
Nicely Joseph C
Toyota Jidosha & Kabushiki Kaisha
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