Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2008-07-18
2010-11-09
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S105000, C438S268000, C438S285000, C438S602000, C438S931000, C257SE21062, C257S077000
Reexamination Certificate
active
07829374
ABSTRACT:
A semiconductor device according to the present invention includes a silicon carbide semiconductor substrate having a silicon carbide semiconductor layer; a p-type impurity region provided in the silicon carbide semiconductor layer and including a p-type impurity; a p-type ohmic electrode electrically connected to the p-type impurity region; an n-type impurity region provided in the silicon carbide semiconductor layer adjacent to the p-type impurity region, and including an n-type impurity; and an n-type ohmic electrode electrically connected to the n-type impurity region. The p-type ohmic electrode contains an alloy of nickel, aluminum, silicon and carbon, and the n-type ohmic electrode contains an alloy of titanium, silicon and carbon.
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Form PCT/ISA/237 and a partial English translation.
Hayashi Masashi
Kusumoto Osamu
Utsunomiya Kazuya
Panasonic Corporation
Renner , Otto, Boisselle & Sklar, LLP
Wilczewski Mary
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