Silicon carbide semiconductor device and method for...

Details Silicon carbide semiconductor device and method for... Silicon carbide semiconductor device and method for...

2008-04-29

2008-04-29

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S328000, C257S329000, C257SE29118

Reexamination Certificate

active

07365363

ABSTRACT:
A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

REFERENCES:
patent: 5243204 (1993-09-01), Suzuki et al.
patent: 5976936 (1999-11-01), Miyajima et al.
patent: 6020600 (2000-02-01), Miyajima et al.
patent: 6573534 (2003-06-01), Kumar et al.

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