Silicon carbide semiconductor device and manufacturing method

Details Silicon carbide semiconductor device and manufacturing method Silicon carbide semiconductor device and manufacturing method

2007-02-06

2007-02-06

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S263000, C257S268000, C438S186000, C438S931000

Reexamination Certificate

active

10230115

ABSTRACT:
A silicon carbide semiconductor device that includes J-FETs has a drift layer of epitaxially grown silicon carbide having a lower impurity concentration level than a substrate on which the drift layer is formed. Trenches are formed in the surface of the drift layer, and first gate areas are formed on inner walls of the trenches. Second gate areas are formed in isolation from the first gate areas. A source area is formed on channel areas, which are located between the first and second gate areas in the drift layer. A method of manufacturing the device ensures uniform channel layer quality, which allows the device to have a normally-off characteristic, small size, and a low likelihood of defects.

REFERENCES:
patent: 5323040 (1994-06-01), Baliga
patent: 5679966 (1997-10-01), Baliga et al.
patent: 5742076 (1998-04-01), Sridevan et al.
patent: 5753938 (1998-05-01), Thapar et al.
patent: 5877515 (1999-03-01), Ajit
patent: 6096607 (2000-08-01), Ueno
patent: 6391699 (2002-05-01), Madson et al.
patent: 6551865 (2003-04-01), Kumar et al.
patent: 6600192 (2003-07-01), Sugawara et al.
patent: 6627499 (2003-09-01), Osawa
patent: 6630698 (2003-10-01), Deboy et al.
patent: 6693314 (2004-02-01), Mitlehner et al.
patent: 6710403 (2004-03-01), Sapp
patent: A-4-150073 (1992-05-01), None
patent: A-9-172187 (1997-06-01), None
patent: A-2000-31483 (2000-01-01), None
patent: A-2000-312008 (2000-11-01), None

Affiliated with

Also associated with

Rating

Silicon carbide semiconductor device and manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon carbide semiconductor device and manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide semiconductor device and manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3840144