Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

2005-02-08

2005-02-08

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S192000, C257S288000, C257S616000

Reexamination Certificate

active

06853006

ABSTRACT:
A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending toward a <11-20> direction. An SiC epitaxial layer is formed on an inside surface of the trench.

REFERENCES:
patent: A-6-227886 (1994-08-01), None
patent: A-09-172187 (1997-06-01), None

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