Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

2011-06-28

2011-06-28

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S077000, C257SE29118

Reexamination Certificate

active

07968892

ABSTRACT:
A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

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