Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

2008-03-11

2010-06-08

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S335000, C257S409000, C257S492000, C257S493000

Reexamination Certificate

active

07732821

ABSTRACT:
The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.

REFERENCES:
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patent: 6831345 (2004-12-01), Kinoshita et al.
patent: 7049675 (2006-05-01), Kinoshita et al.
patent: 2007/0045631 (2007-03-01), Endo et al.
patent: 2007/0170436 (2007-07-01), Sugawara
patent: A-H10-503056 (1998-03-01), None
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patent: WO 96/03774 (1996-02-01), None
Office Action dated Feb. 24, 2009 in corresponding Japanese patent application No. 2007-063371 (and English translation).
Office Action dated Sep. 25, 2009 in corresponding German patent application No. 10 2008 014 071.6-33 (and English translation).

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