Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

2008-10-02

2010-10-05

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257SE21603, C257SE21605, C257SE29297, C257SE29298

Reexamination Certificate

active

07808003

ABSTRACT:
A silicon carbide semiconductor device is disclosed. The silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type and located on a first surface of the substrate; and a vertical type semiconductor element. The vertical type semiconductor element includes: an impurity layer having a second conductivity type, and located in a surface portion of the drift layer; and a first conductivity type region located in the drift layer, spaced away from the impurity layer, located closer to the substrate than the impurity layer, and having an impurity concentration higher than the drift layer.

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Office Action mailed Dec. 15, 2009 from the Japan Patent Office for corresponding patent application No. 2007-262031 (English translation enclosed).
Notification of Reason for Refusal issued from the Japanese Patent Office on Jun. 1, 2010 in the corresponding Japanese patent application No. 2007-262031 (a copy and English translation thereof).

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