Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

2007-07-11

2009-02-03

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S192000, C257SE29104

Reexamination Certificate

active

07485895

ABSTRACT:
A silicon carbide semiconductor device is provided with a semiconductor substrate (20) of silicon carbide of a first conductivity type, a hetero semiconductor region (60) forming a hetero-junction with the semiconductor substrate (20), an insulated gate including a gate electrode (40) and a gate insulator layer (30) formed on the semiconductor substrate (20) and adjoining to the hetero semiconductor region (60), a source electrode (80) electrically connected to the hetero semiconductor region (60) and a drain electrode (90) electrically connected to the semiconductor substrate (20).

REFERENCES:
patent: 5877515 (1999-03-01), Ajit
patent: 7061027 (2006-06-01), Tanaka et al.
patent: 7173307 (2007-02-01), Hayashi et al.
patent: 7282739 (2007-10-01), Kaneko
patent: 10-233503 (1998-09-01), None

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