Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-06-08
1994-06-07
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 94, 257103, 257197, 257565, 437100, H01L 29161, H01L 2120
Patent
active
053192206
ABSTRACT:
A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a .beta.-type silicon carbide layer having an .alpha.-type silicon carbide layer disposed thereon.
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patent: 4757028 (1988-07-01), Kondoh et al.
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Solid State Electronics vol. 21 pp. 479-480 by v. Munch et al. 437/100 1978.
Akira Susuki et al., Liquid-Phase Epitaxial Growth of 6H-SiC By The Dipping Technique for Preparation of Blue-Light-Emitting Diodes, May 13, 1976, pp. 4546-4547.
Robert B. Campbell and Hung-Chi Chang, Semiconductor and Semimetals, vol. 7 1971, pp. 625-683.
"Epitaxial Growth of SiC Single Crystals By Successive Two-Step CVD", Journal of Crystal Grown, vol. 70 (1984) pp. 287-290 by Suzuki et al.
"Production of Large-Area Single-Crystal Wafers of Cubic SiC for Semiconductor Devices", pp. 460-462, Applied Physics Letters vol. 42 #5, Mar. 1, 1983 by Nishino et al.
Fujii Yoshihisa
Furukawa Katsuki
Ogura Atsuko
Shigeta Mitsuhiro
Suzuki Akira
Prenty Mark V.
Sharp Kabushiki Kaisha
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