Silicon carbide semiconductor configuration with a high degree o

Details Silicon carbide semiconductor configuration with a high degree o Silicon carbide semiconductor configuration with a high degree o

1999-09-28

2000-08-01

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257628, H01L 310312

Patent

active

060970391

ABSTRACT:
An SiC channel region of a semiconductor configuration, as a result of misoriented epitaxial growth on its surface, is formed with mutually parallel elevations. The flow of electric current in the channel region is set parallel with the elevations. As a result, a high degree of charge-carrier mobility in the channel region is obtained.

REFERENCES:
patent: 5011549 (1991-04-01), Kong et al.
patent: 5363800 (1994-11-01), Larkin et al.
patent: 5736753 (1998-04-01), Ohno et al.
patent: 5958132 (1999-09-01), Takahashi et al.
patent: 5977564 (1999-11-01), Kobayashi et al.
International Patent Application WO 95/34915 (Tornblad), dated Dec. 21, 1995.
Hiroyuki Matsunami et al.: "Step-Controlled Epitaxial Growth of SIC", Mat. Res. Symp. Proc., vol. 162, 1990, pp. 397-407.
Philip G. Neudeck et al.: "Four-Fold Improvement of 3C-SiC PN Junction Diode Blocking Voltage Obtained Through Improved CVD Epitaxy on Low-Tilt-Angle 6H-DiC Wafers", International Electron Devices Meeting 1992, IEEE, San Francisco, Dec. 13-16, 1992, pp. 1003-1005, XP 000687597.
Tsunenobu Kimoto et al.: "Step bunching in chemical vapor deposition of 6H- and 4H-SiC on vicinal SiC(0001) faces", Appl. PHys. Lett., vol. 66, No. 26, Jun. 26, 1995, pp. 3645-3647.

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