Silicon carbide RF power module

Details Silicon carbide RF power module Silicon carbide RF power module

1996-04-14

1998-03-10

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330 65, 330286, 330289, 330307, H03F 368, H03F 130

Patent

active

057266050

ABSTRACT:
An RF power amplifier module utilizing a plurality of silicon carbide transistor power amplifier circuits, each including a transistor assembly having multiple cells, respectively providing power amplification of an input signal. In a preferred embodiment of the invention, four mutually staggered silicon carbide transistor assemblies, each containing multiple transistor cells, are operated in parallel while being arranged in close proximity on a common substrate. Each silicon carbide amplifier circuit assembly is commonly driven by a fifth silicon carbide amplifier circuit. The outputs of the parallely driven silicon carbide transistor power amplifier circuits are combined so as to provide a single composite RF output signal which may be in the order of 1000 watts or more when operated at a frequency of, for example, 600 MHz.

REFERENCES:
patent: 5208554 (1993-05-01), Endler et al.
patent: 5264713 (1993-11-01), Palmour
patent: 5352991 (1994-10-01), Lipschultz
patent: 5396403 (1995-03-01), Patel
IEEE MTT-S International Microwave Symposium Digest, San Diego, May 23-27, 1994, vol. 1, 23 May 1994, Kuno, H.J.; Wen, C.P., "A 4 to 25 GHz 0.5W Monolithic Lossy Match Amplifier", pp. 257-260.

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