Silicon carbide resistance element

Compositions – Electrically conductive or emissive compositions – Carbide containing

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219270, 219553, 252 623R, 252518, 338330, 427 94, 427249, 428364, H01B 104

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active

044433611

ABSTRACT:
Silicon carbide shapes of the general type shown and described in U.S. Pat. No. 4,125,756 are densified and nitrided in such a way as to produce shapes with improved durability and reduction in temperature span in response to voltage changes.

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patent: 4125756 (1978-11-01), Hierholzer, Jr. et al.
patent: 4194028 (1980-03-01), Sirtl et al.
patent: 4205363 (1980-05-01), Boos et al.
patent: 4315968 (1982-02-01), Suplinkas et al.
patent: 4328529 (1982-05-01), Hierholzer et al.

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