Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1982-03-29
1983-12-06
Leeds, Jackson
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
C01B 3136
Patent
active
044193360
ABSTRACT:
An improved acheson furnace structure is shown having insulated gate means for increasing the volume of coarsely crystalline silicon carbide produced in each cycle of the furnace together with a reduction in the volume of fire sand required to be recycled whereby to improve the efficiency of the furnace.
REFERENCES:
patent: 11473 (1895-02-01), Acheson
patent: 1044295 (1912-11-01), Tone
patent: 2178773 (1935-11-01), Benner et al.
patent: 3375073 (1968-03-01), McMullen
patent: 3773553 (1973-11-01), Kamath
patent: 3989883 (1976-11-01), Wiebke et al.
Franklin Rufus M.
Leeds Jackson
Norton Company
LandOfFree
Silicon carbide production and furnace does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon carbide production and furnace, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide production and furnace will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2029464