Silicon carbide production and furnace

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C01B 3136

Patent

active

044193360

ABSTRACT:
An improved acheson furnace structure is shown having insulated gate means for increasing the volume of coarsely crystalline silicon carbide produced in each cycle of the furnace together with a reduction in the volume of fire sand required to be recycled whereby to improve the efficiency of the furnace.

REFERENCES:
patent: 11473 (1895-02-01), Acheson
patent: 1044295 (1912-11-01), Tone
patent: 2178773 (1935-11-01), Benner et al.
patent: 3375073 (1968-03-01), McMullen
patent: 3773553 (1973-11-01), Kamath
patent: 3989883 (1976-11-01), Wiebke et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Silicon carbide production and furnace does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon carbide production and furnace, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide production and furnace will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2029464

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.