Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1997-03-06
1999-07-20
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257613, H01L 310312, H01L 2912
Patent
active
059258950
ABSTRACT:
A silicon carbide metal semiconductor field effect transitor fabricated on silicon carbide substrate with a layer which suppresses surface effects, and method for producing same. The surface-effect-suppressive layer may be formed on exposed portions of the transistor channel and at least a portion of each contact degenerate region. The surface-effect-suppressive layer may be made of undoped silicon carbide or of an insulator, such as silicon dioxide or silicon nitride. If the surface-effect-suppressive layer is made of silicon dioxide, it is preferred that the layer be fabricated of a combination of thermally-grown and chemical vapor deposition deposited silicon dioxide.
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Clarke Rowland C.
Sriram Saptharishi
Loke Steven H.
Northrop Grumman Corporation
Sutcliff Walter G.
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