Silicon carbide power field effect transistor

Details Silicon carbide power field effect transistor Silicon carbide power field effect transistor

1996-11-08

1998-10-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257286, 257330, H01L 2980

Patent

active

058215760

ABSTRACT:
The invention provides for a field effect transistor (FET) which includes a substrate and a buffer layer formed upon the substrate and an active layer formed upon the buffer layer. The active layer includes a gate region, drain region and source region. In addition, a channel region is formed in the active layer intermediate the source region and drain region. The channel region includes a first portion of reduced thickness adjacent the drain region. The active layer may include a recess adjacent the drain region to provide the thin channel region. Preferably, the thickness of the first portion of the channel region is equal to the undepleted channel thickness within the second portion of the channel region adjacent the first portion. The substrate, buffer layer, active layer, and degenerate layers are preferably fabricated of silicon carbide or gallium nitride. Further, the FET preferably includes a p type buffer, n type active layer, and n+ degenerate layers. The FET may also include a surface-effect-suppressive layer which preferably covers portions of the active layer and the degenerate layers.

REFERENCES:
patent: 4984036 (1991-01-01), Sakamoto et al.
patent: 5091759 (1992-02-01), Shih et al.
patent: 5382822 (1995-01-01), Stein
patent: 5399883 (1995-03-01), Baliga
patent: 5455432 (1995-10-01), Hartsell et al.
patent: 5510630 (1996-04-01), Agarwal et al.
"Split-Gate Field-Effect Transistor" by Michael Shur, Appl. Phys. Lett. 54 (2), Jan. 9, 1989.

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