Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-08-16
2011-08-16
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
07998866
ABSTRACT:
The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
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Gilliland Jeffrey
Jones Lamon
Moeggenborg Kevin
White Michael L.
Cabot Microelectronics Corporation
Deo Duy-Vu N
Gettel Nancy J.
Omholt Thomas E.
Steele Susan
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