Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-02-18
1995-02-28
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257466, H01L 2714, H01L 3100
Patent
active
053940059
ABSTRACT:
A silicon carbide photodiode exhibiting high short-wavelength sensitivity, particularly in the ultraviolet spectrum, and very low reverse leakage current includes a p type conductivity 6H crystalline substrate. A first p- silicon carbide crystalline layer is epitaxially grown on the body. A second n+ silicon carbide crystalline layer is epitaxially grown on the first layer and forms a p-
+ junction with the first layer. A metallic upper contact layer is formed on a predetermined surface region of the second layer oppositely situated from the junction. The second layer is of a uniform minimum thickness, generally less than 1000 Angstroms, with a greater thickness, typically 3000-4000 Angstroms, beneath the predetermined surface region. The thicker portion of the second layer occupies less than 10% and generally less than 1% of the total second layer surface area. Hence optical sensitivity of the photodiode is essentially determined by the thinner portion of the second layer, while the thicker portion of this layer is made sufficiently large to prevent diffusion of upper contact layer metal into the vicinity of the junction during contact sintering or alloying operations.
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Brown Dale M.
Edmond John A.
General Electric Company
James Andrew J.
Meier Stephen D.
Snyder Marvin
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