Silicon carbide MOSFET

Details Silicon carbide MOSFET Silicon carbide MOSFET

1995-03-30

1997-08-26

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257330, 257409, H01L 310312

Patent

active

056613121

ABSTRACT:
A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14) and a drift layer (12). The breakdown enhancement layer (20) has a lower doping concentration that increases the width of a depletion region (24) near a gate insulator (17). The increased depletion region width improves the breakdown voltage.

REFERENCES:
patent: 5168331 (1992-12-01), Yilmaz
patent: 5323040 (1994-06-01), Baliga
patent: 5391895 (1995-02-01), Dreifus
patent: 5393999 (1995-02-01), Malhi
patent: 5396085 (1995-03-01), Baliga
patent: 5451797 (1995-09-01), Davis et al.
patent: 5495124 (1996-02-01), Terashima
patent: 5506421 (1996-04-01), Palmour

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