Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2011-08-23
2011-08-23
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S328000, C257SE29104
Reexamination Certificate
active
08003991
ABSTRACT:
This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer.
REFERENCES:
patent: 3617824 (1971-11-01), Shinoda et al.
patent: 2005/0077591 (2005-04-01), Fukuda et al.
patent: 2005/0133794 (2005-06-01), Hayashi et al.
patent: 2005/0280004 (2005-12-01), Das et al.
patent: 2006/0057796 (2006-03-01), Harada et al.
patent: 6-318678 (1994-11-01), None
patent: 10-136642 (1998-05-01), None
patent: 2002-203967 (2002-07-01), None
patent: 2005-183563 (2005-07-01), None
patent: WO 2004/036655 (2004-04-01), None
Fukuda Kenji
Harada Shinsuke
Okamoto Mitsuo
Yatsuo Tsutomu
Huber Robert
Malsawma Lex
National Institute of Advanced Industrial Science and Technology
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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