Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1996-06-06
1998-02-17
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257330, 257328, H01L 310312
Patent
active
057194092
ABSTRACT:
A silicon carbide (SIC) metal-insulator semiconductor field effect transistor having a u-shaped gate trench and an n-type SiC drift layer is provided. A p-type region is formed in the SiC drift layer and extends below the bottom of the u-shaped gate trench to prevent field crowding at the corner of the gate trench. A unit cell of a metal-insulator semiconductor transistor is provided having a bulk single crystal SiC substrate of n-type conductivity SiC, a first epitaxial layer of n-type SiC and a second epitaxial layer of p-type SiC. First and second trenches extend downward through the second epitaxial layer and into the first epitaxial layer with a region of n-type SiC between the trenches. An insulator layer is formed in the first trench with the upper surface of the insulator on the bottom of the trench below the second epitaxial layer. A region of p-type SiC is formed in the first epitaxial layer below the second trench. Gate and source contacts are formed in the first and second trenches respectively and a drain contact is formed on the substrate.
REFERENCES:
patent: 4219835 (1980-08-01), van Loon
patent: 4571815 (1986-02-01), Baliga et al.
patent: 4587712 (1986-05-01), Baliga
patent: 4608584 (1986-08-01), Mihara
patent: 4642666 (1987-02-01), Lidow et al.
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4860084 (1989-08-01), Shibeta
patent: 4865685 (1989-09-01), Palmour
patent: 4893160 (1990-01-01), Blanchard
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 4908682 (1990-03-01), Takahashi
patent: 4912063 (1990-03-01), Davis et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 4952991 (1990-08-01), Kayama
patent: 4959699 (1990-09-01), Lidow et al.
patent: 4965647 (1990-10-01), Takahashi
patent: 4972240 (1990-11-01), Murakami et al.
patent: 4974059 (1990-11-01), Kinzer
patent: 4975750 (1990-12-01), Hayashi et al.
patent: 4981551 (1991-01-01), Palmour
patent: 4994413 (1991-02-01), Eshita
patent: 5168331 (1992-12-01), Yilmaz
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5225032 (1993-07-01), Golecki
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5233215 (1993-08-01), Baliga
patent: 5247192 (1993-09-01), Nii
patent: 5264713 (1993-11-01), Palmour
patent: 5270554 (1993-12-01), Palmour
patent: 5279701 (1994-01-01), Shigeta et al.
patent: 5323040 (1994-06-01), Baliga
patent: 5396085 (1995-03-01), Baliga
patent: 5506421 (1996-04-01), Palmour et al.
Saidov, M.S., Shamuratov, Kh. A. and Umurzakov, A; Current-voltage characteristics of silicon carbide heterojunctions, Sov. Phys. Semicond. 13(9), pp. 1054-1056 (Sep. 1979).
Kong et al., Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type .beta.-SiC grown via chemical vapor deposition, Appl. Phys. Lett. 51(6), 10 (Aug. 1987).
Kelner et al., .beta.-SiC MESFET's and Buried-Gate JFET's, IEEE Electron Device Letters, vol. EDL-8, No. 9 (Sep. 1987).
Palmour et al., High-temperature depletion-mode metal oxide-semiconductor field-effect transistors in beta-SiC thin films, 320 Applied Physics Letters, 51 (Oct. 1987).
Dmitriev et al., High-temperature Sic-6H Field-effect Transistor with p-n gate, Sov. Tech. Phys. Lett. 14(2) (Feb. 1988).
Edmond, J. A., Ryu, J., Glass, J. T. and Davis, R.F.; Electrical Contacts to Beta Silicon Carbide Thin Films, Journal of the Electrochemical Society 135(2) (Feb. 1988).
Dimitriev et al., First SiC Dynistor, Electronics Letters, vol. 24, No. 16 (Aug. 1988).
Palmour et al., Characterization of device parameters in high-temperature metal-oxide-semiconductor/field-effect transistors in .beta.-SiC thin films, J. Appl. Phys. 64(4) (Aug. 15, 1988).
Fuma et al., High Temperature Operated Enhancement-Type .beta.-Sic MOSFET, Japanese Journal of Applied Physics, vol. 27, No. 11 (Nov. 1988).
Yoder et al., Silicon Carbide Comes of Age, Naval Research Revies (1989).
Kelner et al., High-Transconductance .beta.-SiC Buried-Gate JFET's, IEEE Transactions On Electron Devices, vol. 36, No. 6 (Jun. 1989).
Palmour, et al., Ultrafast silicon carbide rectifiers, Powertechnics Magazine (Aug. 1989).
Pan et al., Reactive Ion Etching of SiC Thin Films By Mixtures of Flourinated Gases and Oxygen, Journal of the Electrochemical Society, 137, No. 1 (Jan. 1990).
Waldrop et al., Formation of Schottky barrier height of metal contacts to .beta.-SiC, Appl. Phys. Lett. 56(6) (Feb. 5, 1990).
Kanaya et al., Controlled sublination growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction, Appl. Phys. Lett., vol. 58, No. 1 (Jan. 7, 1991).
Kelner et al., High Temperature Operation of .alpha.-Silicon Carbide Buried-Gate Junction Field Effect Transistors, Elec. Lett., vol. 27, No. 12 (Jun. 1991).
Palmour et al., Junction Devices in 6H-SiC, International Semiconductor Device Research Symposium (Dec. 4-6, 1991).
Baliga, New Materials Beyond Silicon For Power Devices, Power Semiconductor Devices and Circuits (1992).
Ivanov et al., Recent Developments in SiC Single-Crystal Electronics, Semiconductor Science and Technology, No. 7 (Jul. 1992).
Bhatnagar et al., SiC power UMOSFET: design, analysis and technological feasibility, Inst. Phys. Conf. No. 137, Ch. 7 (1993).
Alok et al., Low Contact Resistivity Ohmic Contacts to 6H-Silicon Carbide, IEEE (1993).
Bhatnagar et al., Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices, IEEE (1993).
Baliga, Power MOSFET, Power Semiconductor Devices, Ch. 7, pp. 335-425.
Palmour John W.
Singh Ranbir
Crane Sara W.
Cree Research Inc.
Hardy David B.
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