Silicon carbide metal diffusion barrier layer

Details Silicon carbide metal diffusion barrier layer Silicon carbide metal diffusion barrier layer

1995-02-02

1998-10-06

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 55, 257 63, H01L 310312, H01L 2904, H01L 31036, H01L 310376

Patent

active

058180710

ABSTRACT:
Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards.

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"Semiconductor Devices" Physics and Technology; p. 372; S.M. Size.
"Semiconductors", p. 35, Helmut F. Wolf.
Chiang, C. et al., Components Research, Intel Corp., "Dielectric Barrier Study for Cu Metallization", Jun. 7-8, 1994 VMIC Conference 1994 ISMIC --103/94/0414.

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